发明名称 Multiple page memory
摘要 A memory system is able to simultaneously access multiple rows in page mode operation. The multiple page memory includes a memory array with multiple internal read registers to improve the effective page cycle time. The multiple page memory of this invention is very effective in graphics applications where multiple page memory access is required. A memory with multiple page random access in accordance with this invention greatly enhances performance by allowing different sources to continue to access the memory in the page mode, in spite of intervening memory accesses by other sources to other rows of the memory. A VRAM with multiple page random access in accordance with this invention provides an even higher performance graphic memory system.
申请公布号 US5793663(A) 申请公布日期 1998.08.11
申请号 US19960733344 申请日期 1996.10.17
申请人 OAK TECHNOLOGY INCORPORATED 发明人 NG, SUNNY T.;NGUYEN, TUAN
分类号 G11C11/401;G06F12/00;G06F12/02;G06F12/08;G11C7/10;(IPC1-7):G11C15/00 主分类号 G11C11/401
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