| 摘要 |
A plasma processing apparatus includes a first electrode which is substantially flat and has a substrate mounting region mounted with a substrate to be treated, a chamber for containing the first electrode, gas introducing means for introducing a predetermined gas into the chamber, gas exhausting means for exhausting the gas from the chamber, a second electrode constituted of one of a metal portion of the chamber and a metal plate provided inside the chamber, power supply means for supplying high-frequency power between the first electrode and the second electrode, and an insulative cover for covering a surface of the first electrode other than the substrate mounting region. The substrate mounting region is formed as a convex portion on the first electrode, and an outside shape thereof is smaller than that of the substrate. The substrate is mounted on the substrate mounting region so as to completely cover the substrate mounting region.
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