| 发明名称 |
Method for forming a film over a spin-on-glass layer by means of plasma-enhanced chemical-vapor deposition |
| 摘要 |
A method for forming an oxide film over a spin-on-glass (SOG) layer by a plasma-enhanced chemical-vapor deposition (PECVD) is disclosed. The SOG layer is pre-processed in a forming gas of hydrogen and nitrogen in a PECVD chamber. Then the oxide film is formed over the SOG layer by means of the PECVD process in the PECVD chamber.
|
| 申请公布号 |
US5792702(A) |
申请公布日期 |
1998.08.11 |
| 申请号 |
US19960770170 |
申请日期 |
1996.12.19 |
| 申请人 |
WINBOND ELECTRONICS CORP. |
发明人 |
LIANG, JACK |
| 分类号 |
H01L21/3105;H01L21/316;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/3105 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
