| 摘要 |
A method of manufacturing a semiconductor device whereby a photoresist layer is provided on a surface of a slice of semiconductor material, after which two photomasks corresponding to adjoining portions of a pattern to be formed in the photoresist are projected on the photoresist by means of a projection lens, with overlapping edges. Strip-shaped transparent end portions of the two photomasks which are situated within this edge and which overlap one another in projection are provided with strip-shaped connection patterns which overlap one another in projection and which exhibit a complementary transmittance in projection. To keep the quantity of computer data necessary for describing the photomasks comparatively small, the strip-shaped transparent end portions of the two photomasks overlapping one another in projection are provided at their edges only with strip-shaped connection patterns overlapping one another in projection.
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