METHOD OF PREPARING REGULAR SILICON FILAMENTARY CRYSTALS

摘要

FIELD: semiconductor technics. SUBSTANCE: layer of metal at least 400 <EMI ID=0.277 HE=6 WI=3 TI=CHI> thick is sprayed onto the surface of silicon plate, which is then subjected to masking by photoresistor followed by applying initiating admixture by way of electrochemical deposition of metal islands from electrolyte solution. EFFECT: essentially reduced parameter spread and enabled interchangeability of sensors with filamentary crystals.