SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To solve the overflow problem of electrons which are overflown to a clad layer from an active layer of a semiconductor light emitting element. SOLUTION: AlGaInNP mixed crystal is used for the semiconductor laser active layer 13 having a 650nm band (visible light) and a 1300nm band (infrared rays). The ratio of N is set at 3% or smaller for the 650nm band and 5 to 10% for the 1300nm band laser. When the ratio of N is changed, the discontinuous energy quantity ΔEc of a conduction band becomes larger, and the overflow of electron to p-clad layers 12 and 14 from the active layer can be suppressed by the enlarged electronic barrier.