| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable application of a pulse bias to an object to be etched without distortion of the pulse waveform, by applying a specified pulse voltage as a bias voltage to an object to be etched or a specimen stand, and installing a means for applying a high frequency voltage as a bias voltage. SOLUTION: A microwave 8 and a magnetic field 11 for generating plasma 4 are installed. A power source 3 for independently applying a bias to a specimen stand 6 is installed. A wafer 1 to be etched is mounted on the specimen stand 6. A DC voltage is applied to an electrostatic attraction film 13 formed on the specimen stand 6, and the wafer 1 is attracted by the specimen stand 6. In order to accelerate ions and electrons in the plasma, a pulse bias is applied to the specimen stand 6. A polysilicon film formed on an SiO2 film covering a silicon wafer is etched by using chlorine gas. Thereby etching excellent in form controllabity is enabled.</p> |
