| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly integrated FRAM in a simple structure. SOLUTION: A plurality of TFTs are arranged on the upper part of a ferroelectric capacitor which is provided with respectively and integrally formed lower electrode 1 and a ferroelectric layer 2 and a plurality of upper electrodes 3. The plurality of TFTs are provided respectively corresponding to the upper electrodes 3. Insulator layers 4a are further provided on the upper electrodes 3 so as to leave windows for bringing the TFTs into contact with the upper electrodes 3 to form the TFTs on the insulator layers 4a and exposed upper electrodes 3. Besides, ground pads are formed between the plurality of upper electrodes 3 on the ferroelectric layer 2 to discharge the charge generated by the pyroelectric effect on the surface of the ferroelectric layer. In such a constitution, it is recommended that the lower and upper electrodes 1, 3 are formed of ceramics especially RuOx. |
