SEMICONDUCTOR WAFER, ITS MANUFACTURE, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial wafer for MIS devices at a low cost which has an improved gettering power and gate oxide film characteristics (GOI). SOLUTION: An epitaxial wafer having an epitaxial layer grown on a main surface of a single crystal Si wafer made by the Czochralski method has a microdefect density of 1×10<6> to 1×10<9> defects/cm<3> as an epitaxially grown single crystal Si wafer. The epitaxial layer is 0.3-3μm thick, and contains an impurity boron of the same conductivity type less than 3×10<16> atoms/cm<3> as that of the single crystal Si wafer 1.