| 摘要 |
PROBLEM TO BE SOLVED: To prevent the upper part of a base from being peeled by forming an interlayer insulation layer between polysilicon composing the base and an electrode composed of a metallization. SOLUTION: A base 2 comprising a substrate 1 and a polysilicon layer 2 has diameter of about 50μm and a terminal is formed thereon. The part of polysilicon layer forming the base 2 is prevented perfectly from coming into contact with an aluminum interconnection 5 by an interlayer insulator 3 composed of PSG. Since the base 2 composed of a polysilicon layer is prevented from coming into contact with an electrode composed of the aluminum interconnection 5 by the interlayer insulator 3, easily peelable state due to thermal stress can be eliminated at the time of forming anneal under a state where PSG 3 and plasma SiN 7 are deposited and the upper part of the base is prevented from being peeled.
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