| 摘要 |
<p>In a semiconductor device and a method for manufacturing the same according to the present invention, a bonding wire is bonded to an electrode pad of a semiconductor element by ball bonding. The bonding wire is cut to have a predetermined length, and compressed and crushed into a bump. By doing so, a wire bump electrode is formed on each electrode pad of the semiconductor element. The wire bump electrodes formed on the electrode pads are then bonded to the respective substrate electrodes on a mounting substrate by melting a low-melting metal. As a result, a flip chip bonding structure wherein the semiconductor element and mounting substrate are bonded to each other by the wire bump electrodes, is obtained. Even in a semiconductor device wherein a semiconductor element is bonded to a resin type mounting substrate whose thermal expansion coefficient greatly differs from that of the semiconductor element, a flip chip bonding structure, which is strong in a heat cycle test and has high reliability, can be achieved.</p> |
