PIN photodiode with P-, N-, and I-type layers as optical communications receiver

摘要

The diode has I-type layer (4) located between the P-type (2) and N-type layer (3). Between the I-type and N-type layer is formed a coupling face (5) such that the I-type layer is a high ohmic value, prefabricated wafer coupled to a prefabricated, strongly enriched N-type wafer serving as the N-type layer. The high ohmic value wafer thickness is adjusted to the desired position of the peak value of the spectral sensitivity, i.e. the sensitivity dependent on the wavelength of light beams to be received. The wafer thickness may be adjusted to the maximum amplitude in the spectrum of the light beams to be received.