| 摘要 |
<p>A method for manufacturing a semiconductor device incorporating an MOS element includes a process for forming a gate insulating film on a semiconductor substrate, a process for forming a gate electrode on the gate insulating film, and a process for implanting the ion of an impurity into a source forming area and a drain forming area. The ion implantation of the impurity into the source forming area and the drain forming area is performed in different ion implanting processes. In at least one of the ion implanting processes for the source and the drain forming areas, a wall is formed to the gate insulating film in a resist layer used for blocking the introduction of the impurity at a position separated from the gate electrode, so that electric charges can be made to flow to the substrate side through the wall. When this manufacturing method is used, a semiconductor device having a high data holding characteristic can be obtained by preventing the quality deterioration of a tunnel oxide film or gate oxide film at the time of performing the ion implantation through simple treatment without increasing the number of processes.</p> |
