| 摘要 |
The sensor element has a silicon substrate 1 having a semiconductor circuit 6, a sensing-element portion 3 formed on the silicon substrate and connected to the semiconductor circuit 6, and a cavity portion 8 formed by removing a silicon substrate portion below the sensing-element portion 3. An etch barrier region 7 is provided in the silicon substrate 1 between the semiconductor circuit 6 and the cavity portion 8. The etch barrier may be silicon oxide, silicon nitride, titanium, molybdenum, gold or platinum.
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