| 摘要 |
A lateral semiconductor device with enhanced breakdown characteristics includes a semiconductor substrate composite of first and second semiconductor substrates bonded to one another via an oxide film. An insulation film is buried in a separation trench which extends from a major surface of the first semiconductor substrate to the oxide film. An element region of greater than 10 mu m in thickness is isolated by the separation trench from other element regions. First and second diffusion regions of opposite conductivity type are formed on the element region. The potential of the second substrate is fixed at one-third of the designed maximum breakdown voltage of the lateral semiconductor device. Alternatively, if the element region is 10 mu m or less in thickness, the potential of the second substrate is fixed at one-half of the designed maximum breakdown voltage of the lateral semiconductor device.
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