| 摘要 |
PROBLEM TO BE SOLVED: To thin an interlayer insulating film in a peripheral circuit part and reduce contact radius, by connecting a conducting plug penetrating the interlayer insulating film with a buried wiring layer formed by filling a trench for wiring which is arranged on the interlayer insulating film. SOLUTION: A selecting transistor STr and a transistor Tr of a peripheral circuit are formed on a silicon substrate SUB surface. A bit line BL is wired in an interlayer insulating film between the substrate SUB and a capacitor CAP and connected with a diffusion layer of the selecting transistor STr through a bit line contact BC. The capacitor CAP is connected with the diffusion layer of the selecting transistor STr through a node contact NC. The bit line BL is composed of conducting material buried in a bit line trench BCL made in an interlayer insulating film covering the transistor STr. The bit line contact BC penetrates the bit line BL and connected with the substrate SUB. The upper surface of the bit line BL is flattened, covered with an insulating film and separated from the capacitor CAP. |
