发明名称 DYNAMIC SEMICONDUCTOR MEMORY DEVICE AND ITS TEST METHOD
摘要 PROBLEM TO BE SOLVED: To reduce a test time. SOLUTION: In a normal mode, a step-up voltage Vpp is applied to a selected word line WL1. On the other hand, a power supply voltage Vcc lower than the Vpp level is applied to the selected word line WL1 in a test mode. In the test mode, therefore, the level of a 'high' data written in a memory cell 25 in the test mode is lower than the level of a 'high' data written in the memory cell 25 in the normal mode. As a result, a time during which H→L error is produced can be reduced and a test time can be reduced.
申请公布号 JPH10199296(A) 申请公布日期 1998.07.31
申请号 JP19970002261 申请日期 1997.01.09
申请人 MITSUBISHI ELECTRIC CORP 发明人 ADACHI YUKINOBU;OKIMOTO HIROMI;HAYASHIGOE MASANORI
分类号 G01R31/28;G01R31/3185;G11C11/401;G11C11/407;G11C29/14;G11C29/50;H01L21/822;H01L27/04;(IPC1-7):G11C29/00;G01R31/318 主分类号 G01R31/28
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