| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of growing crystal, whereby the flatness is enhanced and film thickness and compsn. ratio are controlled with high accuracy. SOLUTION: A II and VI elements are fed to grow a crystal layer of a II-VI compd. semiconductor by the MBE method, comprising a step 1 of feeding a II element and then a VI element with an interruption time and allowing another interruption time to grow a crystal layer of 0.5ML or less, and a step 2 of feeding the II element and then the IV element with an interruption time and allowing another interruption time to grow a crystal layer of 0.5ML or more, thereby forming a crystal layer of 1ML, together with the step 1. Thus a crystal is grown two-dimensionally. |
