Method of writing data to a single transistor type ferroelectric memory cell,申请号EP19970306010-传众专利搜索

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发明名称	Method of writing data to a single transistor type ferroelectric memory cell
摘要
申请公布号	EP0827153(A3)	申请公布日期	1998.07.22
申请号	EP19970306010	申请日期	1997.08.07
申请人	TOKYO INSTITUTE OF TECHNOLOGY	发明人	ISHIHARA, HIROSHI;TOKUMITSU, EISUKE
分类号	G11C14/00;G11C11/22;G11C16/04;H01L21/8247;H01L27/10;H01L29/788;H01L29/792;(IPC1-7):G11C11/22	主分类号	G11C14/00
代理机构		代理人
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