| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent an error in data from occurring even when erasing and writing are repeated many times by making a control in page erasing and writing in such a manner as to store data of other pages in the same block as a subject page, and rewrite the stored data to an original place after data of the subject page have been completely erased. SOLUTION: When data are to be written with only one page in a block of a non-volatile semiconductor memory erased, a memory cell not selected is also exposed to a weak electron injection mode, thereby, reliability is decreased in accordance with an increase of the number of erasure, write times. A control circuit 6 controls a row decoder 2, a column decoder 3, an input/ output control circuit 4 to read data of all other pages in the same block as a subject page, store the data outside via a data terminal, and controls a voltage generation circuit 5 to erase the data of the subject page. Thereafter, the control circuit 6 controls each circuit to rewrite the data stored outside to an original place of the original page.</p> |
