Fabricating array with storage capacitor between cell electrode and dark matrix

摘要

An array is fabricated in which a cell's dark matrix overlaps its cell electrode so that the overlap areas and the dielectric material between them form a storage capacitor. Each cell's dark matrix can overlap the cell's electrode around its perimeter, and the overlap areas of the dark matrix and the electrode can be sufficiently large and the dielectric layer between them can be sufficiently thin that the storage capacitor they form meets the cell's requirements. The dark matrix can be over the cell electrode, with scan lines and data lines in a series of lower layers, or the dark matrix can be below the series of layers that includes scan lines and data lines, with the cell electrode in an opening defined in the series of layers. The dark matrix layer can be electrically connected to a fixed potential.