SEMICONDUCTOR CHIP AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor chip by which a semiconductor chip having a gallium nityide compound semiconductor layer on the surface of a sapphire substrate can be separated more easily at a high yield in manufacturing the semiconductor chip. SOLUTION: Separating grooves 40 having an acute-angled bottom are formed at the position corresponding to the boundary line of each chip on the front or rear surface of a sapphire substrate 30. Then the grooves 40 are filled with a liquid buffer agent 50 which increases in volume when the agent 50 solidifies or is heated. After the groove 40 are filled with the agent 50, the agent 50 is solidified or heated so as to increase the volume of the agent 50 and to fracture and divide into chips by the concentration of the outward forces developed in the groove 40 due to the volume increase to the sharp fluted points, Therefore, the substrate 30 is divided into individual chips along the grooves 40.