| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device for forming local wirings having satisfactory characteristics by using silicide technology. SOLUTION: First metal silicide films 9S, 9D, 9G, 10 are formed on a silicon region of a substrate in which an insulating region and the silicon region are exposed. A metal film 11 made of metal which can be silicified is deposited on the overall region of a surface of a substrate to cover the first metal silicide film. A silicon film 12 is deposited on a surface of the metal film. The silicon film and the metal film are patterned, and a laminated pattern obtained by laminating the silicon film and the metal film extended from part of the silicon region of the surface of the substrate to the part of the insulating region is formed. The laminated pattern is heated to cause silicification, thereby forming second metal silicide layers 15S, 15D. |
