| 摘要 |
PROBLEM TO BE SOLVED: To manufacture at low price by simultaneously forming both electrodes by a method wherein an n side electrode and a p side electrode are formed of the same metal material. SOLUTION: Semiconductor layers 2 to 5 for forming a light emitting area on a surface of a substrate 1 are laminated to form a semiconductor lamination part, and a p side electrode 8 is formed on the surface via a diffusion metal layer 7. Further, an n side electrode 9 is formed in the n type layer in which a part of the laminated semiconductor layers 3 to 5 is removed. Therein, the p side electrode 8 and n side electrode 9 comprise a lamination structure of metal thin films 8a, 9a, Ti layers 8b, 9b, and Au layers 8c, 9c containing Ni or Zn each, and both the electrodes 8, 9 are formed with the same material and thickness. On the substrate 1, the low temperature buffer layer 2, the n type layer 3, for example, an active layer 4 composed of an InGaN system compound semiconductor, and the p type layer 5 composed of a p type AlGan system compound semiconductor layer 5a and a GaN layer 5b are sequentially laminated, respectively. |
