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发明名称
Halbleiter-Bearbeitungsverfahren zum Herstellen eines Isoliergrabens in einem Substrat
摘要
申请公布号
DE4310954(C2)
申请公布日期
1998.07.16
申请号
DE19934310954
申请日期
1993.04.02
申请人
MICRON TECHNOLOGY, INC., BOISE, ID., US
发明人
LEE, ROGER R., BOISE, ID., US;GONZALEZ, FERNANDO, BOISE, ID., US
分类号
H01L21/28;H01L21/76;H01L21/762;H01L21/763;(IPC1-7):H01L21/762
主分类号
H01L21/28
代理机构
代理人
主权项
地址
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