| 摘要 |
The subject invention provides a method of etching boron nitride which comprises doping a layer of boron nitride with an element from Group IVA of the Periodic Table of the Elements, such as silicon, carbon, or germanium. After the boron nitride layer is doped, it can be etched with techniques such as wet etching with hot phosphoric acid, hydrofluoric acid, or buffered hydrofluoric acid, which was not possible prior to doping the boron nitride. |
