FABRICATION PROCESS OF COMPOUND SEMICONDUCTOR DEVICE COMPRISING L-SHAPED GATE ELECTRODE,申请号KR19940022395-传众专利搜索

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发明名称	FABRICATION PROCESS OF COMPOUND SEMICONDUCTOR DEVICE COMPRISING L-SHAPED GATE ELECTRODE
摘要
申请公布号	KR0140950(B1)	申请公布日期	1998.07.15
申请号	KR19940022395	申请日期	1994.09.06
申请人	NEC CORP	发明人	OIKAWA, YOICHI
分类号	H01L29/812;H01L21/285;H01L21/338;H01L29/423;H01L29/47;(IPC1-7):H01L21/338	主分类号	H01L29/812
代理机构		代理人
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