| 发明名称 |
GASSPHASE REACTOR |
| 摘要 |
PURPOSE:To relatively reduce a deviation in temperature of a semiconductor substrate by improving a heater for said substrate. |
| 申请公布号 |
JPS5214586(A) |
申请公布日期 |
1977.02.03 |
| 申请号 |
JP19750090159 |
申请日期 |
1975.07.25 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
YAMAMOTO SHINICHI;WATANABE AKIO |
| 分类号 |
C30B25/10;C23C16/46;H01L21/205;H01L21/22 |
主分类号 |
C30B25/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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