| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for producing an a-Si system photoreceptor capable of decreasing the number of spherical projections formed on the a-Si system photoreceptor, improving image quality and reducing a cost. SOLUTION: This process for producing the non-single crystal silicon system photoreceptor by a plasma enhanced CVD method consists in introducing gaseous raw material and high-frequency electric power into a vacuum hermetically sealable reaction vessel 101, cracking these gaseous raw materials by the high- frequency electric power and forming deposited films on substrates 108 arranged to enclose the film forming space 116 in the reaction vessel. In such a case, the wall surfaces constituting the film forming space are subjected to temp. control before the start of the film formation and throughout the film formation to keep the difference between the max. and min. of the wall surface temp. within a prescribed value until the film formation of 1μm is executed on the wall surfaces 103, 105 of the film formation space, by which the adhesion of the foreign matter onto the substrates during the film formation by the film peeling of the wall surfaces 103, 105 of the film formation space is prevented.
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