Photoelectric tube using electron beam irradiation diode as anode

摘要

When light is incident on the photoelectric surface of this electron tube, photoelectrons are emitted. These photoelectrons are accelerated and incident on an electron beam irradiation diode. A reverse voltage of about 100 V is applied to the electron beam irradiation diode to form a depletion region almost throughout an anode layer and near the p-n junction interface of a silicon substrate. The incident accelerated electrons release a kinetic energy in a heavily doped p-type layer having an electron incidence surface and the depleted anode layer to form electron-hole pairs. In this case, since the heavily doped p-type layer having the electron incidence surface is very thin, the energy is hardly released in this layer, and almost all energy is released in the depletion region. Signal charges extracted from the electron-hole pairs formed upon releasing the energy are output as a signal from two electrodes.