Transistor protection circuit

摘要

The transistor protection device provides a circuit capable of obtaining a sufficient discharge characteristic when an electrostatic discharge voltage is applied to a semiconductor integrated circuit composed of a bipolar transistor. The protection device is provided across an emitter-base (E-B) junction of the bipolar transistor. When an electrostatic discharge voltage for biasing the E-B junction in the reverse direction is applied, the protection device is turned on and the surge current flows through the protection device such that the current which flows into the E-B junction of the transistor is greatly reduced so as to prevent electrostatic breakdown.