| 摘要 |
FIELD: semiconductors. SUBSTANCE: injecting element for semiconductor devices has structure formed on substrate with zones of semiconductor wide-gap materials, type A2B6, capable of injecting charge carriers at application of voltage, featured by the fact that structure zones represent elements of crystal texture or epitaxial layers and are made of similar semiconductor material having a thickness within fractions of micron to several microns determined by thickness of region of space charge; an intermediate layer, 10 to 100 A thick, is positioned between the regions, it is selected proceeding from the condition of insurance of tunnel of electrons and holes. Zinc sulfide may be used as semiconductor material. The method of production of injecting elements consists in formation of structure of zinc sulfide semiconductor material on substrate. Structure is formed as crystal texture by precipitation from gaseous phase at a temperature of 180 to 300 C. EFFECT: effective injection of charge carriers into monopolar semiconductor. 2 cl, 3 dwg.
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