Process for fabricating connection structures

摘要

The present invention provides a process for fabricating a connection structure comprising a anti-reaction layer having excellent barrier properties and having improved ohmic characteristics with respect to the semiconductor substrate. Accordingly, the present invention comprises forming a first anti-reaction layer by temporarily ceasing the film deposition, and then initiating the film deposition again to form a second anti-reaction layer on the surface of the previously deposited first anti-reaction layer. A heat treatment can be applied to the structure after depositing a anti-reaction layer.