| 摘要 |
PROBLEM TO BE SOLVED: To obtain an AlN member less liable to the reduction of heat conductivity at the joined part, having high bonding strength and suitable for use as a heat radiating member for a semiconductor device. SOLUTION: This AlN member consists of AlN sintered compacts joined to each other and the heat conductivity measured through the joined part 3 is >=95% of that of the sintered compacts. This member has an internal cavity for circulating a refrigerant and the cavity communicates with the outside through two or more openings 2 acting as refrigerant feeding and discharging holes. This member has a recess 4 for mounting a semiconductor device in the surface and may have a metallic layer on the bottom of the recess 4. |
