A semiconductor laser device and a method of producing the same

摘要

A semiconductor laser device having a mesa stripe whose side faces are facets of {111} planes is disclosed. In the laser device, a current blocking layer is formed on a semiconductor substrate (1) whose main surface is a (100) plane, and a channel (10) which is oriented along the <011> direction is formed in the current blocking layer. The mesa stripe is formed on the substrate (1) within the channel (10) by a selective growth technique. The mesa stripe has a multilayer structure (11) including an active layer (4) and is covered by a burying layer.