发明名称 Surface-mounted substrate structure and method
摘要 <p>A surface-mounted substrate structure is provided that includes a substrate (10), a doped semiconductor layer (16), and a dielectric layer (14). The substrate (10) has an upper surface and a lower surface and an interconnect opening (12) extending between the upper surface and the lower surface of the substrate (10). The doped semiconductor layer (16) is positioned within the interconnect opening (12). The doped semiconductor layer (16) is also positioned above the upper surface and below the lower surface of the substrate material (10) in an area surrounding the interconnect opening (12). The dielectric layer (14) is positioned between the doped semiconductor layer (16) and the substrate material (10). <IMAGE></p>
申请公布号 EP0851492(A2) 申请公布日期 1998.07.01
申请号 EP19970121537 申请日期 1997.12.08
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 GOOCH, ROLAND
分类号 H01L23/12;B81B7/00;H01L23/055;H01L23/498;(IPC1-7):H01L23/538 主分类号 H01L23/12
代理机构 代理人
主权项
地址
您可能感兴趣的专利