Metal programmed transistor array.

摘要

A silicon semi-conductor comprising a substrate with a plurality of columns of implants therein and an oxide layer thereover is disclosed. Within the oxide layer are a plurality of rows of polycrystalline material. The columns of implants and rows of polycrystalline silicon material are arranged to form an array of transistors with the implants connected in series in a plurality of columns, and with each row of polycrystalline material acting as the gate for the transistors in a specific row of the array. Contact windows are etched through the oxide layer to each implant. A plurality of metal layer paths are formed on the oxide layer which also pass through the contact windows and make electrical connection with the implants therebelow. The metal layer also has various paths which define jumpers electrically short out various transistors in the array, as necessary to meet specific programming requirements of a customer.