| 发明名称 |
Method of metallizing submicronie (e.g. micronie) contact holes in semiconductor body |
| 摘要 |
Metallising submicron contact holes in semiconductor bodies comprises depositing the metal by a single CVD process within a single CVD chamber, where initially a titanium-rich layer is deposited and subsequently a low ohmic titanium silicide (TiSi2) is deposited. |
| 申请公布号 |
EP0798777(A3) |
申请公布日期 |
1998.07.01 |
| 申请号 |
EP19970104276 |
申请日期 |
1997.03.13 |
| 申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
HIEBER, KONRAD, DR. DIPL.-PHYS.;IREICHEL, HELMUTH, DIPL.-ING. (FH);KOERNER, HEINRICH, DR. DIPL.-CHEM. |
| 分类号 |
C23C16/06;H01L21/28;H01L21/285;H01L21/3205;H01L21/768;H01L23/485;H01L23/52;H01L29/45 |
主分类号 |
C23C16/06 |
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