| 摘要 |
In a semiconductor memory, for forming a storage node of an information storage capacitor formed above a semiconductor substrate, an interlayer insulator film is formed above the semiconductor substrate, and a contact hole is formed to penetrate through the interlayer insulator film and to reach the semiconductor substrate. A polysilicon film is deposited to fill the contact hole and to cover the interlayer insulator film, and ions are implanted into the polysilicon film to convert a surface layer of the polysilicon film into an amorphous state, so that the surface of polysilicon film is smoothened. On the polysilicon film, a resist mask for patterning of the storage node is formed by a photolithography, and, and the polysilicon film is etched using the resist mask to form the storage node.
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