摘要 |
<p>PROBLEM TO BE SOLVED: To create ultra-fine cold cathode chips by forming ultra-fine nucleuses on the cathode substrate surface for becoming a cold cathode and placing the substrate in a plasma etching process as an ultra-fine mask by using reactive gas. SOLUTION: Diamond nucleuses 2 of about 10nm diameter are formed by a vapor phase method. In this case, microwaves oscillated from a magnetron are introduced in a quartz tube through a waveguide so as to set the circumference of a single crystal silicon in a plasma state and under this state, for instance, mixed gas such as methane 1%-hydrogen 99% is allowed to flow in. Next, the substrate is placed in an electron cycrotron resonance type watching unit so as to carry out plasma etching treatment for a preset period of time. Owing to this process, such an object can be fabricated as a carbonaceous material (diamond) coated ultra-fine silicon column with such a size as approximately 10nm long×10nm wide×100 to 500nm high.</p> |