发明名称 MANUFACTURE OF COLD CATHODE COATED WITH CARBONACEOUS MATERIAL AND THE COLD CATHODE
摘要 <p>PROBLEM TO BE SOLVED: To create ultra-fine cold cathode chips by forming ultra-fine nucleuses on the cathode substrate surface for becoming a cold cathode and placing the substrate in a plasma etching process as an ultra-fine mask by using reactive gas. SOLUTION: Diamond nucleuses 2 of about 10nm diameter are formed by a vapor phase method. In this case, microwaves oscillated from a magnetron are introduced in a quartz tube through a waveguide so as to set the circumference of a single crystal silicon in a plasma state and under this state, for instance, mixed gas such as methane 1%-hydrogen 99% is allowed to flow in. Next, the substrate is placed in an electron cycrotron resonance type watching unit so as to carry out plasma etching treatment for a preset period of time. Owing to this process, such an object can be fabricated as a carbonaceous material (diamond) coated ultra-fine silicon column with such a size as approximately 10nm long×10nm wide×100 to 500nm high.</p>
申请公布号 JPH10177837(A) 申请公布日期 1998.06.30
申请号 JP19970278590 申请日期 1997.10.13
申请人 ULVAC JAPAN LTD 发明人 MURAKAMI HIROHIKO;IMADA SAKI
分类号 H01J9/02;H01J1/30;H01J1/304;(IPC1-7):H01J9/02 主分类号 H01J9/02
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