Dynamic random access memory having an internal circuit using a boosted potential

摘要

A second charge pump circuit generates a boosted potential at a second level required by a word driver. A first charge pump circuit generates a boosted potential at a first level required by a BLI driver. It is therefore not necessary to generate a boosted potential larger than necessary to BLI driver. As a result, unnecessary current consumption may be restrained and the circuit may be prevented from breaking down, resulting in improved reliability.