| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a high breakdown voltage semiconductor device improved to avoid deteriorating the breakdown voltage characteristics owing to the influence of the humidity or lowering the durability against power cycle tests. SOLUTION: On a metal base 11 a mounting hand 12 has a collector conductor pattern 15c deposited. A high breakdown voltage semiconductor chip 16 is mounted on the top surface of this pattern 15c. Except an electric field relaxed region 19 formed at the periphery of the chip 16, emitter electrodes 18e and gate electrodes 18g at the inner part have active parts to which connections of metal thin wires 27e, 27g are fixed. Only active regions 21 including these connections are coated with a lower moisture resistive polyamide or polyimide region to form end cap members 28. This ensure a certain strength of the connections of the metal thin wires 27e, 27g to the electrodes 18e, 18g and prevents the breakdown voltage characteristic from deteriorating owing to the influence of the humidity or the durability from lowering at power cycle tests.</p> |
