发明名称 SPUTTERING TARGET
摘要 <p>PROBLEM TO BE SOLVED: To provide a sputtering target capable of producing low resistance wire film suitable for a display for liq. crystals. SOLUTION: In a sputtering target used for a thin film deposition method in which a sputtering phenomenon by glow discharge is utilized, the sputtering target is essentially consisting of metallic chromium and metallic molybdenum, and the content of oxygen therein is regulated to <=200ppm. Furthermore, the compositional ratio of the metallic molybdenum to the metallic chromium is set to the range of 20 to 80wt.%. Moreover, as the metallic chromium, the one obtd. by solidifying metallic chromium powder large in grain size is used, and, as the metallic molybdenum, the dissolved material of metallic molybdenum is used.</p>
申请公布号 JPH10168564(A) 申请公布日期 1998.06.23
申请号 JP19960328673 申请日期 1996.12.09
申请人 HITACHI LTD;HITACHI METALS LTD 发明人 KIZAWA KENICHI;HASHIMOTO KENICHI;CHIYABARA KENICHI;NAKAJIMA KATSUNORI;KANEKO TOSHITERU;MINEMURA TETSUO;MURATA HIDEO
分类号 G02F1/136;B22F7/08;C22C27/04;C22C27/06;C23C14/34;G02F1/1368;(IPC1-7):C23C14/34 主分类号 G02F1/136
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