Method of in-situ wafer cooling for a sequential WSI/alpha -Si sputtering process

摘要

The present invention relates to a method of a sequencial WSi/ alpha -Si sputtering process, more particularly to a method of in-situ wafer cooling for a sequencial WSi/ alpha -Si sputtering process. A sputtering process of WSi and a sputtering process of alpha -Si are finished in a multi-chamber sputtering apparatus according to the invention; meanwhile, a wafer is cooled down by bolwing of inert gas before a process of sputtering alpha -Si starts. Thus, compared to traditional art of finishing WSi/ alpha -Si sputtering in two apparatus, partial time of vacuuming and venting required in a sputtering process is saved according to the invention, thereby, shortening the production cycle time, reducing the possibility of wafer contamination, and suppressing the fabricating cost.