发明名称 Process for producing semiconductor components between which contact is made vertically
摘要 PCT No. PCT/DE94/00486 Sec. 371 Date Nov. 3, 1995 Sec. 102(e) Date Nov. 3, 1995 PCT Filed May 2, 1994 PCT Pub. No. WO94/25981 PCT Pub. Date Nov. 10, 1994A process for producing components having a contact structure provides for vertical contact-making, in which, for the connection of a metal contact of a first component to a metal contact of a second component, the substrate is etched out, starting from the top, in a region provided for a vertical, conductive connection, this recess is filled with a metal so that said metal is connected to the surface of the metal contact, the rear side of the substrate is removed until the metal projects beyond the rear side, a metallization layer made of a metal having a low melting point, for example AuIn, is applied to the metal contact of the second component, the surface of the second component is provided with a planar layer, the two components are arranged vertically with respect to one another and a permanent contact is produced between the metal of the first component and the metallization layer of the second component by pressing one onto the other and heating.
申请公布号 US5767001(A) 申请公布日期 1998.06.16
申请号 US19950545650 申请日期 1995.11.03
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 BERTAGNOLLI, EMMERICH;KLOSE, HELMUT
分类号 H01L21/768;H01L23/48;H01L25/065;H01L27/00;H01L27/06;(IPC1-7):H01L21/283;H01L21/302 主分类号 H01L21/768
代理机构 代理人
主权项
地址