Semiconductor memory with short-circuit testing function - has switches for alternately connecting cell select lines in column and=or row direction to current source line and ground, and has current meter for measuring leakage current.

摘要

The memory has a memory cell matrix (4) with row and column memory cell selection lines used to select a memory cell at the intersection point of 2 addressed lines, for data read-out. The selection lines in the row and/or column direction are coupled in sequence via a number of switch elements to a current supply potential line and to an earth line. Pref. the current supply potential line and the earth line are coupled to the same current source (10), with measurement of the current flowing between the 2 lines for each addressed memory cell to allow a short-circuit to be detected. ADVANTAGE - Reliable detection of short-circuit between bit and word lines caused by foreign material.