发明名称 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURE THEREOF, CIRCUIT BOARD, AND ELECTRONIC EQUIPMENT
摘要 A semiconductor device whose package size is nearly the same as the size of a chip, and which can effectively absorb thermal stress in addition to a stress absorbing layer. A semiconductor device (150) has semiconductor chip having an electrode (158), a resin layer (152) formed as a stress reducing layer on the semiconductor chip, an interconnect (154) which is formed on the entire surface including the electrode (158) and the resin layer (152), and a solder ball (157) which is formed on a part of the interconnect (154) which is formed on the resin layer (152). The resin layer (152) is so formed as to have a recess (152a) on its surface and the interconnect (154) is so formed as to also cover the entire surface including the recess (152a).
申请公布号 WO9825298(A1) 申请公布日期 1998.06.11
申请号 WO1997JP04438 申请日期 1997.12.04
申请人 SEIKO EPSON CORPORATION;HASHIMOTO, NOBUAKI 发明人 HASHIMOTO, NOBUAKI
分类号 H01L21/60;H01L21/768;H01L23/31;H01L23/36;H01L23/485;H01L23/532 主分类号 H01L21/60
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