发明名称 |
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURE THEREOF, CIRCUIT BOARD, AND ELECTRONIC EQUIPMENT |
摘要 |
A semiconductor device whose package size is nearly the same as the size of a chip, and which can effectively absorb thermal stress in addition to a stress absorbing layer. A semiconductor device (150) has semiconductor chip having an electrode (158), a resin layer (152) formed as a stress reducing layer on the semiconductor chip, an interconnect (154) which is formed on the entire surface including the electrode (158) and the resin layer (152), and a solder ball (157) which is formed on a part of the interconnect (154) which is formed on the resin layer (152). The resin layer (152) is so formed as to have a recess (152a) on its surface and the interconnect (154) is so formed as to also cover the entire surface including the recess (152a). |
申请公布号 |
WO9825298(A1) |
申请公布日期 |
1998.06.11 |
申请号 |
WO1997JP04438 |
申请日期 |
1997.12.04 |
申请人 |
SEIKO EPSON CORPORATION;HASHIMOTO, NOBUAKI |
发明人 |
HASHIMOTO, NOBUAKI |
分类号 |
H01L21/60;H01L21/768;H01L23/31;H01L23/36;H01L23/485;H01L23/532 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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