| 摘要 |
<p>It is an object to present a semiconductor memory device of nonvolatile ferroelectric capable of operating stably without loss of logic voltage "L" data of the memory cell in rewriting operation. To achieve this object, for example, as shown in FIG. 1, diodes 1, 2 are connected to cell plate lines 39, 40. Therefore, in rewriting operation, if there is a parasitic resistance 3 in the cell plate line 39, it is possible to prevent occurrence of transient phenomenon of temporary transition of the cell plate line 39 to an excessive negative voltage (for example, lower than -1 V) which may cause loss of data. <IMAGE></p> |
