METHOD FOR MANUFACTURING HIGH-CAPACITANCE STORAGE NODE STRUCTURE IN SUBSTRATE AND SUBSTRATE HAVING HIGH-CAPACITANCE STORAGE NODE

摘要

PROBLEM TO BE SOLVED: To provide a simple method for manufacturing the high-capacitance storage node structure of a DRAM(dynamic random access memory), etc. SOLUTION: In order to form a high-capacitance storage node structure in a substrate 10, a negative resist area 16 and a positive resist area 18 are formed in an exposed area 14 by patterning a hybrid resist 12. After the positive resist area 18 is removed, the substrate 10 is etched by using the non-exposed part of the hybrid resist 12 and the negative resist area 16 as masks. As a result, a trench 22 and a projecting section 24 which is positioned at the center of the trench 22 and projects upward are formed in the substrate 10. Then, a capacitor 26 is formed by coating the side wall of the trench 22 and the projecting section 24 with a dielectric material 28 and filling up the trench 22 with a conductive material 30.