发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To seal integrally both of semiconductor chips by a method wherein in a semiconductor integrated circuit device of a structure, wherein the semiconductor chips are respectively mounted on each of both surfaces of a die pad, the adhesion layer on at least one side of first and second adhesion layers is constituted of an insulating film having a constant thickness. SOLUTION: A semiconductor integrated circuit device is provided with a lead frame 10, which has a tabular die pad 11, inner leads 12, outer lead 13 and support lead 14. A first semiconductor chip 7 is bonded to the surface 11a on one side of the surfaces of the die pad 11 through an insulating film 1 having a constant thickness as a first adhesion layer. A second semiconductor chip 8 is bonded to the other surface 11b of the die pad 11 through a silver-free paste 2 which is used as a second adhesion layer. Electrode pads 7p and electrode pads 8p are respectively formed on the surfaces 7a and 8a of the chips 7 and 8 and the sides of the rears 7b and 8b of the chips 7 and 8 are bonded to the die pad 11. As the material for the film 1, a thermosetting silicon denatured polyimide or the like is used.
申请公布号 JPH10154786(A) 申请公布日期 1998.06.09
申请号 JP19960314716 申请日期 1996.11.26
申请人 SHARP CORP 发明人 NAKANISHI HIROYUKI
分类号 H01L23/50;H01L23/495 主分类号 H01L23/50
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